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| ZXMN6A09DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=60V; RDS(ON)=0.045 D=5.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SO8 * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package APPLICATIONS * DC - DC Converters * Power Management Functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXMN6A09DN8TA ZXMN6A09DN8TC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units Top View DEVICE MARKING * ZXMN 6A09D PROVISIONAL ISSUE D - AUGUST 2001 1 ZXMN6A09DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V GS =10V; T A =25C)(b)(d) (V GS =10V; T A =70C)(b)(d) (V GS =10V; T A =25C)(a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A =25C (a)(d) Linear Derating Factor Power Dissipation at T A =25C (a)(e) Linear Derating Factor Power Dissipation at T A =25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT 60 20 5.2 4.1 3.9 17.6 3.5 15 1.25 10 1.81 14.5 2.16 17.3 -55 to +150 UNIT V V A I DM IS I SM PD PD PD T j :T stg A A A W mW/C W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a)(d) Junction to Ambient (a)(e) Junction to Ambient (b)(d) SYMBOL R JA R JA R JA VALUE 100 69 58 UNIT C/W C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum junction temperature. (d) For device with one active die (e) For device with two active die running at equal power. PROVISIONAL ISSUE D - AUGUST 2001 2 ZXMN6A09DN8 THERMAL CHARACTERISTICS 10 ID Drain Current (A) RDS(on) Limit Max Power Dissipation (W) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 One active die Two active die 1 DC 1s 100ms Single Pulse Tamb=25 C One active die 10ms 1ms 100s 100m 10m 100m 1 10 100 VDS Drain-Source Voltage (V) Temperature ( C) Safe Operating Area 110 Tamb=25 C 100 90 One active die 80 70 D=0.5 60 50 40 D=0.2 30 20 10 0 100 1m 10m 100m Derating Curve Thermal Resistance ( C/W) Maximum Power (W) 100 Single Pulse Tamb=25 C One active die 10 Single Pulse D=0.05 D=0.1 1 100 1m 10m 100m 1 10 100 1k 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation PROVISIONAL ISSUE D - AUGUST 2001 3 ZXMN6A09DN8 ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr 0.85 26.3 26.6 0.95 V ns nC T J =25C, I S =6.6A, V GS =0V T J =25C, I F =3.5A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Qg Q gs Q gd 4.9 5.0 25.3 4.6 12.4 24.2 5.2 3.5 ns ns ns ns nC nC nC nC V DS =15V,V GS =10V, I D =3.5A V DD =15V, I D =3.5A R G =6.0, V GS =10V (refer to test circuit) V DS =15V,V GS =5V, I D =3.5A C iss C oss C rss 1407 121 59 pF pF pF V DS =40 V, V GS =0V, f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 15 1.0 0.045 0.075 60 1 100 V A nA V S I D =250A, V GS =0V V DS =60V, V GS =0V V GS =20V, V DS =0V I =250A, V DS = V GS D SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V GS =10V, I D =8.2A V GS =4.5V, I D =7.4A V DS =15V,I D =8.2A NOTES (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE D - AUGUST 2001 4 ZXMN6A09DN8 TYPICAL CHARACTERISTICS T = 25 C T = 150 C 4V 3.5V 5V 5V 4V 3.5V 3V ID Drain Current (A) 1 ID Drain Current (A) 10 10 3V VGS 1 2.5V 0.1 2.5V 0.1 2V VGS 0.01 0.1 1 10 0.01 0.1 1 10 VDS Drain-Source Voltage (V) VDS Drain-Source Voltage (V) Normalised RDS(on) and VGS(th) 10 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 0 ID Drain Current (A) T = 150 C VGS = 10V ID = 12A RDS(on) 1 T = 25 C VGS(th) VGS = V DS ID = 250uA 0.1 2 3 4 VDS = 10V 5 50 100 150 VGS Gate-Source Voltage (V) Tj Junction Temperature ( C) RDS(on) Drain-Source On-Resistance ISD Reverse Drain Current (A) 1 3V 3.5V 4V 10 VGS T = 150 C 1 0.1 5V 10V T = 25 C T = 25 C 0.1 1 10 ID Drain Current (A) 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) 1.2 PROVISIONAL ISSUE D - AUGUST 2001 5 ZXMN6A09DN8 VGS Gate-Source Voltage (V) 1800 1600 ID = 3.5A C Capacitance (pF) 1400 1200 1000 800 600 400 200 0 1 10 CISS VGS = 0V f = 1MHz COSS CRSS VDS = 15V VDS - Drain - Source Voltage (V) Q - Charge (nC) Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE D - AUGUST 2001 6 ZXMN6A09DN8 PROVISIONAL ISSUE D - AUGUST 2001 7 ZXMN6A09DN8 PACKAGE DIMENSIONS DIM Millimetres Min A B C D E F G J K L 4.80 Max 4.98 Inches Min 0.189 Max 0.196 1.27 BSC 0.53 REF 0.36 3.81 1.35 0.10 5.80 0 0.41 0.46 3.99 1.75 0.25 6.20 8 1.27 0.05 BSC 0.02 REF 0.014 0.15 0.05 0.004 0.23 0 0.016 0.018 0.157 0.07 0.010 0.24 8 0.050 (c) Zetex plc 2001 Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc Suite 315 700 Veterans Memorial Highway Hauppauge NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong, Hong Kong China Telephone: (852) 26100 611 Fax: (852) 24250 494 These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com PROVISIONAL ISSUE D - AUGUST 2001 8 |
Price & Availability of ZXMN6A09DN8
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